CS6N80A8R 是华晶的一款6A 800V高压MOS管,东森微电子专业代理CS6N80A8R,并可提供电路设计 程序开发等技术支持,可开具增票.
CS6N80A8R the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with
the RoHS standard.
* Fast Switching
* Low ON Resistance(Rdson≤2.2?)
* Low Gate Charge (Typical Data:35nC)
* Low Reverse transfer capacitances(Typical:15pF)
* 100% Single Pulse avalanche energy Test
Atx Power、LED Power.