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  您的位置: 首页 >> 场效应(MOS)管 >> IR >> IRF540N
IRF540N图片

IRF540N
元件品牌:IR
元件型号:IRF540N
采购数量:
 

详细参数

IRF540N is Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


The IRF540N is TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


IRF540N Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRF540NPBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

IRF540N性能参数:
Attributes Table
Fet TypeN-Ch
No of Channels1
Drain-to-Source Voltage [Vdss]100V
Drain-Source On Resistance-Max44mΩ
Rated Power Dissipation130W
Qg Gate Charge71nC
Gate-Source Voltage-Max [Vgss]20V
Drain Current33A
Turn-on Delay Time11ns
我司不但为您提供可靠的IRF540N场效应(MOS)管,还可提供IRF540N应用资料、各类认证证书及产品研发等技术支持!
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