The NCE0130KA usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications.
● VDS= 100V,ID =30A
RDS(ON) < 32mΩ@ VGS=10V (Typ:25mΩ)
● Specialprocess technology for high ESD capability
● High density cell design for ultra low Rdson
● Fullycharacterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellentpackage for good heat dissipation