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IRL2203NPBF图片

IRL2203NPBF
元件品牌:IR
元件型号:IRL2203NPBF
采购数量:
 

详细参数

 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free
IRL2203NPBF Description:
Advanced HEXFETfi Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
属性
Attributes Table
Fet TypeN-Ch
No of Channels1
Drain-to-Source Voltage [Vdss]30V
Drain-Source On Resistance-Max7mΩ
Rated Power Dissipation180|W
Qg Gate Charge60nC
Gate-Source Voltage-Max [Vgss]16V
Drain Current116A
Turn-on Delay Time11ns
Turn-off Delay Time23ns
Rise Time160ns
Fall Time66ns
Operating Temp Range-55°C to +175°C
Gate Source Threshold1V
TechnologySi
Input Capacitance3290pF
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