产品亮点

• Fet Type: N-Ch
• No of Channels: 1
• Drain-to-Source Voltage [Vdss]:200 V
• Drain-Source On Resistance-Max: 0.15 Ω
• Rated Power Dissipation: 150 W
• Qg Gate Charge: 67 nC
• Gate-Source Voltage-Max [Vgss]: 20 V
• Drain Current: 18 A
• Turn-on Delay Time: 10 ns
• Turn-off Delay Time: 23 ns
• Rise Time: 19 ns
• Fall Time: 5.5 ns
• Operating Temp Range: -55 to +175 °C
• Gate Source Threshold: 4 V
• Technology: Si
• Height - Max: 4.83 mm
• Length: 9.65 mm
• Input Capacitance: 1160 pF