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CJP75N80图片

CJP75N80
元件品牌:CJ长电
元件型号:CJP75N80
采购数量:
 

详细参数

TO-220 Plastic-Encapsulate Transistors
CJP75N80 N-Channel Power MOSFET
General Description
The CJ75N80 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
􀁺 Advanced trench process technology
􀁺 Special designed for convertors and power controls
􀁺 High density cell design for ultra low RDS(on)
􀁺 Fully characterized avalanche voltage and current
􀁺 Fast switching
􀁺 Avalanche energy 100% test
APPLICATIONS
􀁺 Power switching application
􀁺 Hard switched and high frequency circuits
􀁺 Uninterruptible power supply
Equivalent Circuit
Maximum ratings (at TA=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source voltage VDSS 75
Gate-Source Voltage VGS ±258
V
Drain Current(DC) at TC=25℃ 80
Drain Current(DC) at TC=100℃
ID(DC)
78
Drain Current-Continuous @Current-Pulsed(note1) IDM(pulse) 320
A
Peak diode recovery voltage dv/dt 0.6 V/ns
Power Dissipation PD 2 W
Derating factor 1.13 W/℃
Single Pulsed Avalanche Energy(note2) EAS 580 mJ
Thermal Resistance, Junction-to-Ambient 63
Thermal Resistance, Junction-to-Case 0.88
℃/W
Operating Junction and storage Temperature Range Tj, Tstg -55 ~175 ℃
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: Tj=25℃ , VDD=50V,VG=10V,L=0.3mH,ID=62A
我司不但为您提供可靠的CJP75N80场效应(MOS)管,还可提供CJP75N80应用资料、各类认证证书及产品研发等技术支持!
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